The tunnel barrier is as thin as a few atomic layers.ĭue to this, electrons can tunnel through the normally insulating material which Predominant electron spin in a storage layer. The spin dependent tunnel junction produces a large change in resistance depending on
Junction memory cell and magnetic row and column write lines. As shown each bit has spin dependent tunnel MRAM combines speed of SRAM, density of DRAM and non-volatility of flash memoryĪnd hence it is often called ideal memory. It uses electron spin which is inherently permanent unlike charge. MRAM uses magnetic elements to store the data. Unlike semiconductor memories which use electron charge to store the data,
The term MRAM is the short form of Magnetoresistive Random Access Memory. MRAM stands for Magnetoresistive RAM, SRAM stands for Static RAM and DRAM stands for Dynamic RAM.
This page compares MRAM vs SRAM vs DRAM and mentions difference between MRAM, SRAM and DRAM. MRAM vs SRAM vs DRAM-Difference between MRAM,SRAM and DRAM
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